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Potential drop across the oxide and depletion region.Positive charge on gate terminates on negative charges in depletion region.− − − − − − − − − Body (p-type substrate) − − − − − − − − Depletion: VFBp-type substrate, PMOS  n-type substrate Oxide (SiO2) Very Thin! University of California, Berkeleyīody (p-type substrate) Accumulation: VGB “Metal” is more commonly a heavily doped polysilicon layer n+ or p+ layer.

Sandwich of conductors separated by an insulator.Gate (n+ poly) Body (p-type substrate) MOS Capacitor I-V Curve University of California, Berkeley.